XinhSemi (xinhansemi.com), operated by Shenzhen Xinhan Future Electronics Technology Co., Ltd., is an independent distributor of electronic components. This page lists IKD06N60RAATMA1 produced by Infineon Technologies, a Transistors - IGBTs - Single component. Package: TO-252-3, DPak (2 Leads + Tab), SC-63. Operating Temperature: -40°C ~ 175°C (TJ). Part Status: Active. Stocked at our Shenzhen warehouse for global shipping. Request a quote with quantity and target price using the inquiry button on the right — our sales team will follow up within one business day. — xinhansemi.com
| IGBT Type | Trench Field Stop |
|---|---|
| Input Type | Standard |
| Gate Charge | 48nC |
| Power - Max | 100W |
| Test Condition | 400V, 6A, 23 Ohm, 15V |
| Switching Energy | 110µJ (on), 220µJ (off) |
| Td (on/off) @ 25°C | 12ns/127ns |
| Supplier Device Package | PG-TO252-3 |
| Vce(on) (Max) @ Vge, Ic | 2.1V @ 15V, 6A |
| Reverse Recovery Time (trr) | 68ns |
| Current - Collector (Ic) (Max) | 12A |
| Current - Collector Pulsed (Icm) | 18A |
| Voltage - Collector Emitter Breakdown (Max) | 600V |