TPCC8002-H-TE12L-Q

XinhSemi (xinhansemi.com), operated by Shenzhen Xinhan Future Electronics Technology Co., Ltd., is an independent distributor of electronic components. This page lists TPCC8002-H-TE12L-Q produced by Toshiba Semiconductor and Storage, a Transistors - FETs, MOSFETs - Single component. Package: 8-VDFN Exposed Pad. Operating Temperature: 150°C (TJ). Part Status: Obsolete. Stocked at our Shenzhen warehouse for global shipping. Request a quote with quantity and target price using the inquiry button on the right — our sales team will follow up within one business day. — xinhansemi.com

Manufacturer: Toshiba Semiconductor and Storage
Category: Transistors - FETs, MOSFETs - Single
Package: 8-VDFN Exposed Pad
Stock: —
Datasheet: Download

Specifications

Current - Continuous Drain (Id) @ 25°C
FET Type	N-Channel
Vgs (Max)	-
Technology	MOSFET (Metal Oxide)
FET Feature	-
Vgs(th) (Max) @ Id	2.5V @ 1mA
Rds On (Max) @ Id, Vgs	8.3 mOhm @ 11A, 10V
Power Dissipation (Max)	700mW (Ta), 30W (Tc)
Supplier Device Package	8-TSON
Gate Charge (Qg) (Max) @ Vgs	27nC @ 10V
Drain to Source Voltage (Vdss)	30V
Input Capacitance (Ciss) (Max) @ Vds	2500pF @ 10V
Drive Voltage (Max Rds On,Min Rds On)	-