XinhSemi (xinhansemi.com), operated by Shenzhen Xinhan Future Electronics Technology Co., Ltd., is an independent distributor of electronic components. This page lists CSD23202W10 produced by Texas Instruments, a Transistors - FETs, MOSFETs - Single component. Package: 4-UFBGA, DSBGA. Operating Temperature: -55°C ~ 150°C (TJ). Part Status: Active. Stocked at our Shenzhen warehouse for global shipping. Request a quote with quantity and target price using the inquiry button on the right — our sales team will follow up within one business day. — xinhansemi.com
| FET Type | P-Channel |
|---|---|
| Vgs (Max) | -6V |
| Technology | MOSFET (Metal Oxide) |
| FET Feature | - |
| Vgs(th) (Max) @ Id | 900mV @ 250µA |
| Rds On (Max) @ Id, Vgs | 53 mOhm @ 500mA, 4.5V |
| Power Dissipation (Max) | 1W (Ta) |
| Supplier Device Package | 4-DSBGA (1x1) |
| Gate Charge (Qg) (Max) @ Vgs | 3.8nC @ 4.5V |
| Drain to Source Voltage (Vdss) | 12V |
| Input Capacitance (Ciss) (Max) @ Vds | 512pF @ 6V |
| Drive Voltage (Max Rds On,Min Rds On) | 1.5V, 4.5V |
| Current - Continuous Drain (Id) @ 25°C | 2.2A (Ta) |