XinhSemi (xinhansemi.com), operated by Shenzhen Xinhan Future Electronics Technology Co., Ltd., is an independent distributor of electronic components. This page lists DMN10H220L-13 produced by Diodes Incorporated, a Transistors - FETs, MOSFETs - Single component. Package: TO-236-3, SC-59, SOT-23-3. Operating Temperature: -55°C ~ 150°C (TJ). Part Status: Active. Stocked at our Shenzhen warehouse for global shipping. Request a quote with quantity and target price using the inquiry button on the right — our sales team will follow up within one business day. — xinhansemi.com
| FET Type | N-Channel |
|---|---|
| Vgs (Max) | - |
| Technology | MOSFET (Metal Oxide) |
| FET Feature | - |
| Vgs(th) (Max) @ Id | 2.5V @ 250µA |
| Rds On (Max) @ Id, Vgs | 220 mOhm @ 1.6A, 10V |
| Power Dissipation (Max) | 1.3W (Ta) |
| Supplier Device Package | SOT-23 |
| Gate Charge (Qg) (Max) @ Vgs | 8.3nC @ 10V |
| Drain to Source Voltage (Vdss) | 100V |
| Input Capacitance (Ciss) (Max) @ Vds | 401pF @ 25V |
| Drive Voltage (Max Rds On,Min Rds On) | - |
| Current - Continuous Drain (Id) @ 25°C | 1.4A (Ta) |