XinhSemi (xinhansemi.com), operated by Shenzhen Xinhan Future Electronics Technology Co., Ltd., is an independent distributor of electronic components. This page lists SSM3K310T-TE85L-F produced by Toshiba Semiconductor and Storage, a Transistors - FETs, MOSFETs - Single component. Package: TO-236-3, SC-59, SOT-23-3. Operating Temperature: 150°C (TJ). Part Status: Last Time Buy. Stocked at our Shenzhen warehouse for global shipping. Request a quote with quantity and target price using the inquiry button on the right — our sales team will follow up within one business day. — xinhansemi.com
| FET Type | N-Channel |
|---|---|
| Vgs (Max) | ±10V |
| Technology | MOSFET (Metal Oxide) |
| FET Feature | - |
| Vgs(th) (Max) @ Id | - |
| Rds On (Max) @ Id, Vgs | 28 mOhm @ 4A, 4V |
| Power Dissipation (Max) | 700mW (Ta) |
| Supplier Device Package | TSM |
| Gate Charge (Qg) (Max) @ Vgs | 14.8nC @ 4V |
| Drain to Source Voltage (Vdss) | 20V |
| Input Capacitance (Ciss) (Max) @ Vds | 1120pF @ 10V |
| Drive Voltage (Max Rds On,Min Rds On) | 1.5V, 4V |
| Current - Continuous Drain (Id) @ 25°C | 5A (Ta) |