XinhSemi (xinhansemi.com), operated by Shenzhen Xinhan Future Electronics Technology Co., Ltd., is an independent distributor of electronic components. This page lists TPH3208LDG produced by Transphorm, a Transistors - FETs, MOSFETs - Single component. Package: 3-PowerDFN. Operating Temperature: -55°C ~ 150°C (TJ). Part Status: Active. Stocked at our Shenzhen warehouse for global shipping. Request a quote with quantity and target price using the inquiry button on the right — our sales team will follow up within one business day. — xinhansemi.com
| FET Type | N-Channel |
|---|---|
| Vgs (Max) | ±18V |
| Technology | GaNFET (Gallium Nitride) |
| FET Feature | - |
| Vgs(th) (Max) @ Id | 2.6V @ 300µA |
| Rds On (Max) @ Id, Vgs | 130 mOhm @ 13A, 8V |
| Power Dissipation (Max) | 96W (Tc) |
| Supplier Device Package | PQFN (8x8) |
| Gate Charge (Qg) (Max) @ Vgs | 14nC @ 8V |
| Drain to Source Voltage (Vdss) | 650V |
| Input Capacitance (Ciss) (Max) @ Vds | 760pF @ 400V |
| Drive Voltage (Max Rds On,Min Rds On) | 8V |
| Current - Continuous Drain (Id) @ 25°C |
| 20A (Tc) |