XinhSemi（xinhansemi.com）由深圳市芯瀚未来电子科技有限公司运营，是面向全球的独立电子元器件分销商。本页列出的 CSD23202W10 由 Texas Instruments 生产，属 Transistors - FETs, MOSFETs - Single 类元器件。封装：4-UFBGA, DSBGA。工作温度：-55°C ~ 150°C (TJ)。生命周期：Active。深圳仓库现货，支持全球直发。需要批量报价或确认交期，请使用页面右侧"加入询价单"，销售将在 1 个工作日内联系您。— xinhansemi.com
| FET Type | P-Channel |
|---|---|
| Vgs (Max) | -6V |
| Technology | MOSFET (Metal Oxide) |
| FET Feature | - |
| Vgs(th) (Max) @ Id | 900mV @ 250µA |
| Rds On (Max) @ Id, Vgs | 53 mOhm @ 500mA, 4.5V |
| Power Dissipation (Max) | 1W (Ta) |
| Supplier Device Package | 4-DSBGA (1x1) |
| Gate Charge (Qg) (Max) @ Vgs | 3.8nC @ 4.5V |
| Drain to Source Voltage (Vdss) | 12V |
| Input Capacitance (Ciss) (Max) @ Vds | 512pF @ 6V |
| Drive Voltage (Max Rds On,Min Rds On) | 1.5V, 4.5V |
| Current - Continuous Drain (Id) @ 25°C |
| 2.2A (Ta) |