XinhSemi（xinhansemi.com）由深圳市芯瀚未来电子科技有限公司运营，是面向全球的独立电子元器件分销商。本页列出的 DMN10H220L-13 由 Diodes Incorporated 生产，属 Transistors - FETs, MOSFETs - Single 类元器件。封装：TO-236-3, SC-59, SOT-23-3。工作温度：-55°C ~ 150°C (TJ)。生命周期：Active。深圳仓库现货，支持全球直发。需要批量报价或确认交期，请使用页面右侧"加入询价单"，销售将在 1 个工作日内联系您。— xinhansemi.com
| FET Type | N-Channel |
|---|---|
| Vgs (Max) | - |
| Technology | MOSFET (Metal Oxide) |
| FET Feature | - |
| Vgs(th) (Max) @ Id | 2.5V @ 250µA |
| Rds On (Max) @ Id, Vgs | 220 mOhm @ 1.6A, 10V |
| Power Dissipation (Max) | 1.3W (Ta) |
| Supplier Device Package | SOT-23 |
| Gate Charge (Qg) (Max) @ Vgs | 8.3nC @ 10V |
| Drain to Source Voltage (Vdss) | 100V |
| Input Capacitance (Ciss) (Max) @ Vds | 401pF @ 25V |
| Drive Voltage (Max Rds On,Min Rds On) | - |
| Current - Continuous Drain (Id) @ 25°C | 1.4A (Ta) |