| FET Type | GaNFET N-Channel, Gallium Nitride |
|---|---|
| FET Feature | Standard |
| Power - Max | 470W |
| Vgs(th) (Max) @ Id | - |
| Rds On (Max) @ Id, Vgs | 34 mOhm @ 30A, 8V |
| Supplier Device Package | Module |
| Gate Charge (Qg) (Max) @ Vgs | 28nC @ 8V |
| Drain to Source Voltage (Vdss) | 600V |
| Input Capacitance (Ciss) (Max) @ Vds | 2260pF @ 100V |
| Current - Continuous Drain (Id) @ 25°C | 70A (Tc) |